AM8812 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM8812
Código: TMX8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 17.9 nC
Tiempo de subida (tr): 7.2 nS
Conductancia de drenaje-sustrato (Cd): 230 pF
Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm
Paquete / Cubierta: TSSOP-8
Búsqueda de reemplazo de MOSFET AM8812
AM8812 Datasheet (PDF)
am8812.pdf
AiT Semiconductor Inc. AM8812 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8812 uses advanced trench technology to V =20V,I =8A, DS Dprovide excellent R , low gate charge and Typ.R = 11m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. This Typ.R = 15m @ V =2.5V DS(ON) GSdevice is suitable for use as
am8814.pdf
AiT Semiconductor Inc. AM8814 www.ait-ic.com MOSFET 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8814 is the Dual N-Channel logic 20V/7.5A, R =12.5m(typ.)@V =4.5V DS(ON) GSenhancement mode power field effect transistor which 20V/5.5A, R =16m(typ.)@V =2.5V DS(ON) GSis produced using high cell density advanced trench Super high design for
am8811.pdf
AiT Semiconductor Inc. AM8811 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8811 uses advanced trench technology to V =20V,I =11A DS Dprovide excellent R , low gate charge and R
am8810.pdf
AiT Semiconductor Inc. AM8810 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8810 uses advanced trench technology to V =20V,I =7A, DS Dprovide excellent R , low gate charge and Typ.R = 16m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 20m @ V =2.5V DS(ON) GSdevice is suitable for use as
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