AM8812 Todos los transistores

 

AM8812 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM8812
   Código: TMX8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 17.9 nC
   trⓘ - Tiempo de subida: 7.2 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TSSOP-8
 
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AM8812 Datasheet (PDF)

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 am8812.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8812 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8812 uses advanced trench technology to V =20V,I =8A, DS Dprovide excellent R , low gate charge and Typ.R = 11m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. This Typ.R = 15m @ V =2.5V DS(ON) GSdevice is suitable for use as

 9.1. Size:727K  ait semi
 am8814.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8814 www.ait-ic.com MOSFET 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8814 is the Dual N-Channel logic 20V/7.5A, R =12.5m(typ.)@V =4.5V DS(ON) GSenhancement mode power field effect transistor which 20V/5.5A, R =16m(typ.)@V =2.5V DS(ON) GSis produced using high cell density advanced trench Super high design for

 9.2. Size:779K  ait semi
 am8811.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8811 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8811 uses advanced trench technology to V =20V,I =11A DS Dprovide excellent R , low gate charge and R

 9.3. Size:798K  ait semi
 am8810.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8810 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8810 uses advanced trench technology to V =20V,I =7A, DS Dprovide excellent R , low gate charge and Typ.R = 16m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 20m @ V =2.5V DS(ON) GSdevice is suitable for use as

MOSTRAR MÁS

Otros transistores... AM80N06-05D , AM80N20-40PCFM , AM8204 , AM8205 , AM8206 , AM8208 , AM8810 , AM8811 , IRF640 , AM8814 , AM8820 , AM8881 , AM8882 , AM8958 , AM8958C , AM8N20-600D , AM8N25-550D .

 

 
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