AM8812 Specs and Replacement

Type Designator: AM8812

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TSSOP-8

AM8812 substitution

- MOSFET ⓘ Cross-Reference Search

 

AM8812 datasheet

 ..1. Size:876K  ait semi
 am8812.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8812 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8812 uses advanced trench technology to V =20V,I =8A, DS D provide excellent R , low gate charge and Typ.R = 11m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 1.8V. This Typ.R = 15m @ V =2.5V DS(ON) GS device is suitable for use as... See More ⇒

 9.1. Size:727K  ait semi
 am8814.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8814 www.ait-ic.com MOSFET 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8814 is the Dual N-Channel logic 20V/7.5A, R =12.5m (typ.)@V =4.5V DS(ON) GS enhancement mode power field effect transistor which 20V/5.5A, R =16m (typ.)@V =2.5V DS(ON) GS is produced using high cell density advanced trench Super high design for ... See More ⇒

 9.2. Size:779K  ait semi
 am8811.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8811 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8811 uses advanced trench technology to V =20V,I =11A DS D provide excellent R , low gate charge and R ... See More ⇒

 9.3. Size:798K  ait semi
 am8810.pdf pdf_icon

AM8812

AiT Semiconductor Inc. AM8810 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8810 uses advanced trench technology to V =20V,I =7A, DS D provide excellent R , low gate charge and Typ.R = 16m @ V =4.5V DS(ON) DS(ON) GS operation with gate voltages as low as 2.5V. This Typ.R = 20m @ V =2.5V DS(ON) GS device is suitable for use as... See More ⇒

SHOW MORE

Detailed specifications: AM80N06-05D, AM80N20-40PCFM, AM8204, AM8205, AM8206, AM8208, AM8810, AM8811, IRFP460, AM8814, AM8820, AM8881, AM8882, AM8958, AM8958C, AM8N20-600D, AM8N25-550D

Keywords - AM8812 MOSFET specs

 AM8812 cross reference

 AM8812 equivalent finder

 AM8812 pdf lookup

 AM8812 substitution

 AM8812 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.