AM90N03-04I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM90N03-04I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 87 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 41 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-251

Búsqueda de reemplazo de MOSFET AM90N03-04I

AM90N03-04I Datasheet (PDF)

..1. Size:73K analog power
am90n03-04i.pdf

Analog Power AM90N03-04IN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.5 @ VGS = 10V 87converters and power management in portable and 305.5 @ VGS = 4.5V 78bat

4.1. Size:302K analog power
am90n03-04d.pdf

Analog Power AM90N03-04DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)4.5 @ VGS = 10V86 Low thermal impedance 305.5 @ VGS = 4.5V78 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

5.1. Size:295K analog power
am90n03-03p.pdf

Analog Power AM90N03-03PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)3.5 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

5.2. Size:117K analog power
am90n03-08p.pdf

Analog Power AM90N03-08PN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10Vconverters and power management in portable and 3090a12 @ VGS = 4.5Vbattery

5.3. Size:286K analog power
am90n03-01p.pdf

Analog Power AM90N03-01PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1.9 @ VGS = 10V Low thermal impedance 30120a2.9 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

5.4. Size:53K analog power
am90n03-06b.pdf

Analog Power AM90N03-06BN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 6 @ VGS = 10Vconverters and power management such as 3090a7.2 @ VGS = 4.5Vcomputers, pri

5.5. Size:319K analog power
am90n03-03b.pdf

Analog Power AM90N03-03BN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)3.8 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

5.6. Size:57K analog power
am90n03-02d.pdf

Analog Power AM90N03-02DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 2 @ VGS = 10V 130dissipation. Typical applications are DC-DC 30converters and power management in portable and 3.2 @ VGS = 4.5V 103bat

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: