AM90N03-04I. Аналоги и основные параметры

Наименование производителя: AM90N03-04I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 87 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 41 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm

Тип корпуса: TO-251

Аналог (замена) для AM90N03-04I

- подборⓘ MOSFET транзистора по параметрам

 

AM90N03-04I даташит

 ..1. Size:73K  analog power
am90n03-04i.pdfpdf_icon

AM90N03-04I

Analog Power AM90N03-04I N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.5 @ VGS = 10V 87 converters and power management in portable and 30 5.5 @ VGS = 4.5V 78 bat

 4.1. Size:302K  analog power
am90n03-04d.pdfpdf_icon

AM90N03-04I

Analog Power AM90N03-04D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 4.5 @ VGS = 10V 86 Low thermal impedance 30 5.5 @ VGS = 4.5V 78 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 5.1. Size:295K  analog power
am90n03-03p.pdfpdf_icon

AM90N03-04I

Analog Power AM90N03-03P N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 3.5 @ VGS = 10V Low thermal impedance 30 90a 4.6 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

 5.2. Size:117K  analog power
am90n03-08p.pdfpdf_icon

AM90N03-04I

Analog Power AM90N03-08P N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V converters and power management in portable and 30 90a 12 @ VGS = 4.5V battery

Другие IGBT... AM8N20-600D, AM8N25-550D, AM90N02-04D, AM90N03-01P, AM90N03-02D, AM90N03-03B, AM90N03-03P, AM90N03-04D, P55NF06, AM90N03-06B, AM90N03-08P, AM90N03-26P, AM90N04-01P, AM90N04-02P, AM90N04-03P, AM90N06-03B, AM90N06-03P