AM9433P Todos los transistores

 ..1. Size:118K  analog power
 am9433p.pdf

Analog Power AM9433P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -4.5V -8.3 converters and power management in portable and battery-powered products su

 9.1. Size:320K  analog power
 am9435p.pdf

Analog Power AM9435P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 49 @ VGS = -10V -6.5 Low thermal impedance -30 75 @ VGS = -4.5V -5.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.2. Size:486K  ait semi
 am9435.pdf

AM9435 AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM9435 is the P-Channel logic enhancement -30V/-5.8A, R =38m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-4.0A, R =60m (typ.)@V =-4.5V DS(ON) GS high cell density, advanced trench technology to Super high density cell desig

 9.3. Size:726K  axelite
 am9435.pdf

AM9435 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The AM9435 is the P-Channel logic enhancement -30V/-5.2A, RDS(ON) 60m @VGS = -10V mode power field effect transistors are produced -30V/-4.0A, RDS(ON) 90m @VGS = -4.5V using high cell density, DMOS trench technology. Super high density cell design for extremely low This high density process