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AM9433P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM9433P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 23 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOIC-8

 Аналог (замена) для AM9433P

 

 

AM9433P Datasheet (PDF)

 ..1. Size:118K  analog power
am9433p.pdf

AM9433P
AM9433P

Analog Power AM9433PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -4.5V -8.3converters and power management in portable and battery-powered products su

 9.1. Size:320K  analog power
am9435p.pdf

AM9433P
AM9433P

Analog Power AM9435PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)49 @ VGS = -10V -6.5 Low thermal impedance -3075 @ VGS = -4.5V -5.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.2. Size:486K  ait semi
am9435.pdf

AM9433P
AM9433P

AM9435 AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM9435 is the P-Channel logic enhancement -30V/-5.8A, R =38m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-4.0A, R =60m(typ.)@V =-4.5V DS(ON) GShigh cell density, advanced trench technology to Super high density cell desig

 9.3. Size:726K  axelite
am9435.pdf

AM9433P
AM9433P

AM9435-30V P-Channel Enhancement Mode MOSFET DESCRIPTIONFEATUREThe AM9435 is the P-Channel logic enhancement -30V/-5.2A, RDS(ON) 60m@VGS = -10V mode power field effect transistors are produced -30V/-4.0A, RDS(ON) 90m@VGS = -4.5V using high cell density, DMOS trench technology. Super high density cell design for extremely low This high density process

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