STN2302 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN2302

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 44 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT-23

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STN2302 datasheet

 ..1. Size:367K  semtron
 stn2302.pdf pdf_icon

STN2302

STN2302 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m (typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi

 8.1. Size:151K  semtron
 stn2306.pdf pdf_icon

STN2302

STN2306 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m (typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m (typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)

 8.2. Size:368K  semtron
 stn2300a.pdf pdf_icon

STN2302

STN2300A 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m (typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m (typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m (typ.)@VGS =1.8V technology to provide excellent RD

 8.3. Size:367K  semtron
 stn2300.pdf pdf_icon

STN2302

STN2300 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS

MOSTRAR MÁS

Otros transistores... STN1012, STN1304, STN1810, STN18D20, STN1NF20, STN2018, STN2300, STN2300A, IRF830, STN2306, STN2342, STN2342A, STN2NE10, STN2NE10L, STN3400, STN3400A, STN3404