STN2342 Todos los transistores

 ..1. Size:372K  semtron
 stn2342.pdf

STN2342 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2342 is the N-Channel logic enhancement 20V/6.0A, RDS(ON) =25m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =32m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =48m (typ.)@VGS =1.8V provide excellent RDS

 0.1. Size:378K  semtron
 stn2342a.pdf

STN2342A 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2342A is the N-Channel logic 20V/5.8A, RDS(ON) =20m (typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =25m (typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =33m (typ.)@VGS =1.8V technology to provide excellent RD

 8.1. Size:260K  st
 2stf2340 2stn2340.pdf

2STF2340 2STN2340 Low voltage fast-switching PNP power transistors Features Very low collector-emitter saturation voltage High current gain characteristic 4 4 Fast switching speed 3 3 2 2 Applications 1 1 LED SOT-89 SOT-223 Motherboard & hard disk drive Mobile equipment DC-DC converter Figure 1. Internal schematic diagram Description The devices

 9.1. Size:283K  st
 2std2360 2stf2360 2stn2360.pdf

2STD2360 2STF2360 - 2STN2360 Low voltage fast-switching PNP power transistors Features 4 Very low collector-emitter saturation voltage 4 High current gain characteristic 3 3 2 2 Fast-switching speed 1 1 SOT-223 SOT-89 Applications TAB Emergency lighting LED 3 Voltage regulation 1 Relay drive TO-252 (DPAK) Description Figure 1. Internal schem

 9.2. Size:151K  semtron
 stn2306.pdf

STN2306 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m (typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m (typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)

 9.3. Size:368K  semtron
 stn2300a.pdf

STN2300A 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m (typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m (typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m (typ.)@VGS =1.8V technology to provide excellent RD

 9.4. Size:367K  semtron
 stn2300.pdf

STN2300 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS

 9.5. Size:367K  semtron
 stn2302.pdf

STN2302 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m (typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi