STN2342 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STN2342
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT-23L

Búsqueda de reemplazo de MOSFET STN2342

STN2342 Datasheet (PDF)

..1. Size:372K semtron
stn2342.pdf

STN2342 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342 is the N-Channel logic enhancement 20V/6.0A, RDS(ON) =25m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =32m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =48m(typ.)@VGS =1.8V provide excellent RDS

0.1. Size:378K semtron
stn2342a.pdf

STN2342A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342A is the N-Channel logic 20V/5.8A, RDS(ON) =20m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD

8.1. Size:260K st
2stf2340 2stn2340.pdf

2STF23402STN2340Low voltage fast-switching PNP power transistorsFeatures Very low collector-emitter saturation voltage High current gain characteristic44 Fast switching speed3322Applications 11 LEDSOT-89 SOT-223 Motherboard & hard disk drive Mobile equipment DC-DC converterFigure 1. Internal schematic diagramDescriptionThe devices

9.1. Size:283K st
2std2360 2stf2360 2stn2360.pdf

2STD23602STF2360 - 2STN2360Low voltage fast-switching PNP power transistorsFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)DescriptionFigure 1. Internal schem

9.2. Size:151K semtron
stn2306.pdf

STN2306 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m(typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m(typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)

9.3. Size:368K semtron
stn2300a.pdf

STN2300A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD

9.4. Size:367K semtron
stn2300.pdf

STN2300 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS

9.5. Size:367K semtron
stn2302.pdf

STN2302 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m(typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi

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