STN2342
MOSFET. Datasheet pdf. Equivalent
Type Designator: STN2342
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package: SOT-23L
STN2342
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN2342
Datasheet (PDF)
..1. Size:372K semtron
stn2342.pdf 
STN2342 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342 is the N-Channel logic enhancement 20V/6.0A, RDS(ON) =25m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =32m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =48m(typ.)@VGS =1.8V provide excellent RDS
0.1. Size:378K semtron
stn2342a.pdf
STN2342A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2342A is the N-Channel logic 20V/5.8A, RDS(ON) =20m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD
8.1. Size:260K st
2stf2340 2stn2340.pdf
2STF23402STN2340Low voltage fast-switching PNP power transistorsFeatures Very low collector-emitter saturation voltage High current gain characteristic44 Fast switching speed3322Applications 11 LEDSOT-89 SOT-223 Motherboard & hard disk drive Mobile equipment DC-DC converterFigure 1. Internal schematic diagramDescriptionThe devices
9.1. Size:283K st
2std2360 2stf2360 2stn2360.pdf
2STD23602STF2360 - 2STN2360Low voltage fast-switching PNP power transistorsFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)DescriptionFigure 1. Internal schem
9.2. Size:151K semtron
stn2306.pdf
STN2306 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m(typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m(typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)
9.3. Size:368K semtron
stn2300a.pdf
STN2300A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD
9.4. Size:367K semtron
stn2300.pdf
STN2300 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
9.5. Size:367K semtron
stn2302.pdf
STN2302 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m(typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
