STN3400A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN3400A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 52.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: SOT-23

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STN3400A datasheet

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 stn3400a.pdf pdf_icon

STN3400A

STN3400A 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m (typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m (typ.)@VGS =2.5V technology to provide excellent RDS

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 stn3400.pdf pdf_icon

STN3400A

STN3400 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m (typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m (typ.)@VGS =2.5V provide excellent RDS(

 8.1. Size:371K  semtron
 stn3404.pdf pdf_icon

STN3400A

STN3404 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

 8.2. Size:372K  semtron
 stn3406.pdf pdf_icon

STN3400A

STN3406 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

MOSTRAR MÁS

Otros transistores... STN2300A, STN2302, STN2306, STN2342, STN2342A, STN2NE10, STN2NE10L, STN3400, RU7088R, STN3404, STN3406, STN3414, STN3446, STN3456, STN3P6F6, STN4102, STN410D