STN3400A MOSFET Datasheet: N-Ch, 30V, 5.6A. Full specification with pinout and replacement list

STN3400A Specs and Replacement

   Type Designator: STN3400A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 52.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOT-23

STN3400A substitution

- MOSFET ⓘ Cross-Reference Search

STN3400A datasheet

..1. Size:368K semtron
stn3400a.pdf pdf_icon

STN3400A 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m (typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m (typ.)@VGS =2.5V technology to provide excellent RDS... See More ⇒

7.1. Size:373K semtron
stn3400.pdf pdf_icon

STN3400 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m (typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m (typ.)@VGS =2.5V provide excellent RDS(... See More ⇒

8.1. Size:371K semtron
stn3404.pdf pdf_icon

STN3404 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l... See More ⇒

8.2. Size:372K semtron
stn3406.pdf pdf_icon

STN3406 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l... See More ⇒

Detailed specifications: STN2300A , STN2302 , STN2306 , STN2342 , STN2342A , STN2NE10 , STN2NE10L , STN3400 , RU7088R , STN3404 , STN3406 , STN3414 , STN3446 , STN3456 , STN3P6F6 , STN4102 , STN410D .