STN4546 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN4546

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: SOP-8

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STN4546 datasheet

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STN4546

STN4546 STN4546 STN4546 STN4546 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited

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 stn454d.pdf pdf_icon

STN4546

STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opt

 9.1. Size:611K  stansontech
 stn4526.pdf pdf_icon

STN4546

STN4526 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management an

 9.2. Size:702K  stansontech
 stn4536.pdf pdf_icon

STN4546

3 STN4536 Due N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power manageme

MOSTRAR MÁS

Otros transistores... STN4426, STN442D, STN4438, STN4440, STN4480, STN4488L, STN4526, STN4536, IRF3710, STN454D, STN4822, STN4826, STN4828, STN4842, STN484D, STN4850, STN4920