STN4546 Specs and Replacement

Type Designator: STN4546

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOP-8

STN4546 substitution

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STN4546 datasheet

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STN4546

STN4546 STN4546 STN4546 STN4546 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited ... See More ⇒

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STN4546

STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒

 9.1. Size:611K  stansontech
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STN4546

STN4526 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management an... See More ⇒

 9.2. Size:702K  stansontech
stn4536.pdf pdf_icon

STN4546

3 STN4536 Due N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power manageme... See More ⇒

Detailed specifications: STN4426, STN442D, STN4438, STN4440, STN4480, STN4488L, STN4526, STN4536, IRF3710, STN454D, STN4822, STN4826, STN4828, STN4842, STN484D, STN4850, STN4920

Keywords - STN4546 MOSFET specs

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