STN4822 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN4822

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: SOP-8

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STN4822 datasheet

 ..1. Size:508K  stansontech
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STN4822

STN4822 STN4822 STN4822 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURA

 8.1. Size:681K  stansontech
 stn4826.pdf pdf_icon

STN4822

STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook comput

 8.2. Size:506K  stansontech
 stn4828.pdf pdf_icon

STN4822

STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook compu

 8.3. Size:952K  cn vbsemi
 stn4828.pdf pdf_icon

STN4822

STN4828 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel

MOSTRAR MÁS

Otros transistores... STN4438, STN4440, STN4480, STN4488L, STN4526, STN4536, STN4546, STN454D, AON6414A, STN4826, STN4828, STN4842, STN484D, STN4850, STN4920, STN4946, STN4972