STN4946 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN4946

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm

Encapsulados: SOP-8

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STN4946 datasheet

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STN4946

STN4946 STN4946 STN4946 STN4946 Dual N Channel Enhancement Mode MOSFET 12A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular

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 stn4972.pdf pdf_icon

STN4946

STN4972 STN4972 STN4972 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURA

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 stn4920.pdf pdf_icon

STN4946

STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/7.2A, RDS(ON) = 28m @VGS

Otros transistores... STN454D, STN4822, STN4826, STN4828, STN4842, STN484D, STN4850, STN4920, IRF630, STN4972, STN5PF02V, STN6303, STN6562, STN7400, STN80T08, STN8822, STN8822A