All MOSFET. STN4946 Datasheet

 

STN4946 Datasheet and Replacement


   Type Designator: STN4946
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOP-8
 

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STN4946 Datasheet (PDF)

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STN4946

STN4946STN4946STN4946STN4946Dual N Channel Enhancement Mode MOSFET12ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN4946 is the Dual N-Channel logic enhancement mode power field effecttransistors are produced using high cell density , DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particular

 9.1. Size:605K  stansontech
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STN4946

STN4972STN4972STN4972STN4972Dual N Channel Enhancement Mode MOSFET8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4972 is the Dual N-Channel logic enhancement mode power field effect transistorswhich are produced using high cell density DMOS trench technology. It is suitable forthe power management applications in the portable or battery powered system.PIN CONFIGURA

 9.2. Size:482K  stansontech
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STN4946

STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/7.2A, RDS(ON) = 28m@VGS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BUZ907D | STN4920 | DSG052N14N

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