STN8882D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN8882D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 683.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO-251 TO-252

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STN8882D datasheet

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STN8882D

STN8882D N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

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 stn888.pdf pdf_icon

STN8882D

STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Features VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C. CURRENT GAING, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT 2 SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS 3 2 1 AVAILABLE IN TAPE & REEL PACKING IN COMPLIANCE WITH THE 2002/93/EC SOT-223 EUROPEAN DIRECTIVE Applicatio

 9.1. Size:610K  stansontech
 stn8822.pdf pdf_icon

STN8882D

STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer

 9.2. Size:734K  stansontech
 stn8822a.pdf pdf_icon

STN8882D

STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook comput

MOSTRAR MÁS

Otros transistores... STN4972, STN5PF02V, STN6303, STN6562, STN7400, STN80T08, STN8822, STN8822A, AO3401, STP100N10F7, STP100N8F6, STP1013, STP105N3LL, STP10N105K5, STP10N60M2, STP10N65K3, STP10N95K5