STN8882D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STN8882D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 41.3 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 683.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO-251 TO-252

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STN8882D Datasheet (PDF)

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stn8882d.pdf

STN8882D N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

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stn888.pdf

STN888HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGEPNP TRANSISTORFeatures VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C. CURRENT GAING, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT2 SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS 321 AVAILABLE IN TAPE & REEL PACKING IN COMPLIANCE WITH THE 2002/93/EC SOT-223EUROPEAN DIRECTIVEApplicatio

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stn8822.pdf

STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer

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stn8822a.pdf

STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook comput

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