STN8882D Specs and Replacement

Type Designator: STN8882D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 683.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-251 TO-252

STN8882D substitution

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STN8882D datasheet

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STN8882D

STN8882D N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒

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STN8882D

STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Features VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C. CURRENT GAING, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT 2 SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS 3 2 1 AVAILABLE IN TAPE & REEL PACKING IN COMPLIANCE WITH THE 2002/93/EC SOT-223 EUROPEAN DIRECTIVE Applicatio... See More ⇒

 9.1. Size:610K  stansontech
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STN8882D

STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer... See More ⇒

 9.2. Size:734K  stansontech
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STN8882D

STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook comput... See More ⇒

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Detailed specifications: STN4972, STN5PF02V, STN6303, STN6562, STN7400, STN80T08, STN8822, STN8822A, AO3401, STP100N10F7, STP100N8F6, STP1013, STP105N3LL, STP10N105K5, STP10N60M2, STP10N65K3, STP10N95K5

Keywords - STN8882D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.