All MOSFET. STN8882D Datasheet

 

STN8882D MOSFET. Datasheet pdf. Equivalent


   Type Designator: STN8882D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41.3 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 683.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-251 TO-252

 STN8882D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STN8882D Datasheet (PDF)

 ..1. Size:759K  stansontech
 stn8882d.pdf

STN8882D STN8882D

STN8882D N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

 8.1. Size:109K  st
 stn888.pdf

STN8882D STN8882D

STN888HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGEPNP TRANSISTORFeatures VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C. CURRENT GAING, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT2 SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS 321 AVAILABLE IN TAPE & REEL PACKING IN COMPLIANCE WITH THE 2002/93/EC SOT-223EUROPEAN DIRECTIVEApplicatio

 9.1. Size:610K  stansontech
 stn8822.pdf

STN8882D STN8882D

STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer

 9.2. Size:734K  stansontech
 stn8822a.pdf

STN8882D STN8882D

STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook comput

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP11NK50ZFP | UT3401ZL-AE3-R

 

 
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