STP100N10F7 Todos los transistores

 

STP100N10F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STP100N10F7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 61 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 823 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET STP100N10F7

 

STP100N10F7 Datasheet (PDF)

 ..1. Size:1657K  st
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf

STP100N10F7
STP100N10F7

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W

 ..2. Size:648K  st
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf

STP100N10F7
STP100N10F7

STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2

 ..3. Size:205K  inchange semiconductor
stp100n10f7.pdf

STP100N10F7
STP100N10F7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N10F7FEATURESVery low on-resistanceVery low gate charge100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-

 7.1. Size:460K  st
stb100nf03l-03-1 stb100nf03l-03t4 stb100nf03l-03 stb100nf03l-03-1 stp100nf03l-03.pdf

STP100N10F7
STP100N10F7

STP100NF03L-03STB100NF03L-03 STB100NF03L-03-1N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NF03L-03 30V

 7.2. Size:493K  st
stp100n6f7.pdf

STP100N10F7
STP100N10F7

STP100N6F7N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTP100N6F7 60 V 5.6 m 100A 125 WTAB Among the lowest RDS(on) on the market3 Excellent figure of merit (FoM)21 Low Crss/Ciss ratio for EMI immunityTO-220 High avalanche ruggednessApplicati

 7.3. Size:268K  st
stp100nf04l.pdf

STP100N10F7
STP100N10F7

STP100NF04LN-CHANNEL 40V - 0.0036 - 100A TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP100NF04L 40 V

 7.4. Size:398K  st
stb100nf04 stp100nf04.pdf

STP100N10F7
STP100N10F7

STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V

 7.5. Size:535K  st
stp100n8f6.pdf

STP100N10F7
STP100N10F7

STP100N8F6N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesTABOrder code VDS RDS(on)max ID PTOTSTP100N8F6 80 V 0.009 100A 176 W Very low on-resistance Very low gate charge32 High avalanche ruggedness 1 Low gate drive power lossTO-220Applications Switching applicationsF

 7.6. Size:205K  inchange semiconductor
stp100n8f6.pdf

STP100N10F7
STP100N10F7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


STP100N10F7
  STP100N10F7
  STP100N10F7
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD

 

 

 
Back to Top