STP100N10F7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STP100N10F7
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 61 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 823 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO-220
Аналог (замена) для STP100N10F7
STP100N10F7 Datasheet (PDF)
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2
stp100n10f7.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N10F7FEATURESVery low on-resistanceVery low gate charge100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-
stb100nf03l-03-1 stb100nf03l-03t4 stb100nf03l-03 stb100nf03l-03-1 stp100nf03l-03.pdf
STP100NF03L-03STB100NF03L-03 STB100NF03L-03-1N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NF03L-03 30V
stp100n6f7.pdf
STP100N6F7N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTP100N6F7 60 V 5.6 m 100A 125 WTAB Among the lowest RDS(on) on the market3 Excellent figure of merit (FoM)21 Low Crss/Ciss ratio for EMI immunityTO-220 High avalanche ruggednessApplicati
stp100nf04l.pdf
STP100NF04LN-CHANNEL 40V - 0.0036 - 100A TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP100NF04L 40 V
stb100nf04 stp100nf04.pdf
STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V
stp100n8f6.pdf
STP100N8F6N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesTABOrder code VDS RDS(on)max ID PTOTSTP100N8F6 80 V 0.009 100A 176 W Very low on-resistance Very low gate charge32 High avalanche ruggedness 1 Low gate drive power lossTO-220Applications Switching applicationsF
stp100n8f6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
