STP1413A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP1413A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 4.8 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: SOT-353
Búsqueda de reemplazo de MOSFET STP1413A
STP1413A Datasheet (PDF)
stp1413a.pdf
ST1413A P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION ST1413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not
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stp14nk50z.pdf
STP14NK50Z, STP14NK50ZFPSTB14NK50Z, STB14NK50Z-1, STW14NK50ZN-CHANNEL500V-0.34-14ATO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP14NK50Z 500 V
stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf
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stp14nk60z.pdf
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stb14nk50z-1 stb14nk50zt4 stp14nk50zfp.pdf
STP14NK50Z - STP14NK50ZFPSTB14NK50Z-STB14NK50Z-1-STW14NK50ZN-channel 500V - 0.34 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESHTM Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP14NK50Z 500V
sti14nm65n stp14nm65n stw14nm65n stb14nm65n stf14nm65n.pdf
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stp14nf10.pdf
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stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf
STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V
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STP14NK60Z - STP14NK60ZFPSTB14NK60Z/-1 - STW14NK60ZN-channel 600V - 0.45 - 13.5A TO-220/FP-D2/I2PAK-TO-247Zener-protected SuperMESHTM Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP14NK60Z 600V
stb14nm65n stb14nm65n stf14nm65n sti14nm65n stp14nm65n stw14nm65n stf14nm65n sti14nm65n stw14nm65n.pdf
STB14NM65N, STF14NM65NSTI14NM65N,STP14NM65N,STW14NM65NN-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFETTO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@TJmax) max32312STI14NM65N 710 V
stb14nk60zt4 stp14nk60zfp.pdf
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stp14nf12.pdf
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stb140nf55 stb140nf55-1 stp140nf55.pdf
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stp14nf12 stp14nf12fp.pdf
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stp140n6f7.pdf
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stp140nf75.pdf
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stp14nf06.pdf
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stp1433a.pdf
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istp140n6f7.pdf
isc N-Channel MOSFET Transistor ISTP140N6F7FEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
stp140nf75.pdf
isc N-Channel MOSFET Transistor STP140NF75FEATURESDrain Current : I =120A@ T =25D CDrain Source Voltage: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.A
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