STP1413A. Аналоги и основные параметры
Наименование производителя: STP1413A
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 85 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: SOT-353
Аналог (замена) для STP1413A
- подборⓘ MOSFET транзистора по параметрам
STP1413A даташит
..1. Size:649K stansontech
stp1413a.pdf 

ST1413A P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION ST1413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not
8.1. Size:362K st
stb141nf55 stb141nf55-1 stp141nf55.pdf 

STB141NF55 - STB141NF55-1 STP141NF55 N-channel 55V - 0.0065 - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET Features Type VDSS RDS(on) ID (1) STB141NF55 55V
9.1. Size:673K st
stp14nk50z.pdf 

STP14NK50Z, STP14NK50ZFP STB14NK50Z, STB14NK50Z-1, STW14NK50Z N-CHANNEL500V-0.34 -14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP14NK50Z 500 V
9.2. Size:1281K st
stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf 

STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ RDS(on) Type ID 3 TJmax max 1 3 STB14NM50N 2 DPAK 1 STD14NM50N 550 V
9.3. Size:672K st
stp14nk60z.pdf 

STP14NK60Z - STP14NK60ZFP STB14NK60Z - STB14NK60Z-1 - STW14NK60Z N-CHANNEL 600V-0.45 -13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP14NK60Z 600 V
9.4. Size:618K st
stb14nk50z-1 stb14nk50zt4 stp14nk50zfp.pdf 

STP14NK50Z - STP14NK50ZFP STB14NK50Z-STB14NK50Z-1-STW14NK50Z N-channel 500V - 0.34 - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS(on) ID Pw 3 STP14NK50Z 500V
9.5. Size:548K st
sti14nm65n stp14nm65n stw14nm65n stb14nm65n stf14nm65n.pdf 

STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N N-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS RDS(on) Type ID (@TJmax) max 3 2 3 1 2 STI14NM65N 710 V
9.6. Size:263K st
stp14nf10.pdf 

STP14NF10 N-channel 100 V - 0.115 - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type VDSS RDS(on) max ID STP14NF10 100 V
9.8. Size:1066K st
stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf 

STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ RDS(on) Type ID 3 TJmax max 1 3 STB14NM50N 2 DPAK 1 STD14NM50N 550 V
9.9. Size:616K st
stb14nk60zt4 stp14nk60zfp stw14nk60z.pdf 

STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45 - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS(on) ID Pw 3 STP14NK60Z 600V
9.11. Size:975K st
stb14nk60zt4 stp14nk60zfp.pdf 

STB14NK60ZT4, STP14NK60ZFP N-channel 600 V, 0.45 typ.,13.5 A SuperMESH Power MOSFETs in D2PAK and TO-220FP packages Datasheet - production data Features RDS(on) Order codes VDS max. ID PTOT TAB STB14NK60ZT4 160 W 600 V 0.5 13.5 A 3 1 STP14NK60ZFP 40 W 3 2 1 D2PAK Extremely high dv/dt capability TO-220FP 100% avalanche tested Gate charge minimized
9.14. Size:345K st
stp14nf12.pdf 

STP14NF12 STP14NF12FP N-CHANNEL 120V - 0.16 - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP14NF12 120 V
9.15. Size:582K st
stp140n8f7.pdf 

STP140N8F7 N-channel 80 V, 3.5 m typ., 90 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP140N8F7 80 V 4.3 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications
9.16. Size:481K st
stb140nf55 stb140nf55-1 stp140nf55.pdf 

STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065 - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS(on) ID (1) STB140NF55 55V
9.17. Size:313K st
stp14nf12 stp14nf12fp.pdf 

STP14NF12 STP14NF12FP N-channel 120V - 0.16 - 14A - TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STP14NF12 120V
9.18. Size:256K st
stp140n6f7.pdf 

STP140N6F7 N-channel 60 V, 0.0031 typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP140N6F7 60 V 0.0035 80 A 158 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications
9.19. Size:517K st
stp140nf75.pdf 

STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS(on) ID STB140NF75 75V
9.20. Size:1269K st
stf14nm50n sti14nm50n stp14nm50n.pdf 

STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFETs in TO-220FP, I PAK and TO-220 packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max 3 STF14NM50N 2 1 STI14NM50N 550 V 0.32 12 A TO-220FP STP14NM50N TAB TAB 100% avalanche tested Low input capacitance and gate charge 3 3 TO-220 2 I
9.21. Size:247K st
stp14nf06.pdf 

STP14NF06 N-CHANNEL 60V - 0.1 - 14A TO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP14NF10 60 V
9.22. Size:194K stansontech
stp1433a.pdf 

ST1433A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST1433A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not
9.23. Size:260K inchange semiconductor
istp140n6f7.pdf 

isc N-Channel MOSFET Transistor ISTP140N6F7 FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.24. Size:262K inchange semiconductor
stp140nf75.pdf 

isc N-Channel MOSFET Transistor STP140NF75 FEATURES Drain Current I =120A@ T =25 D C Drain Source Voltage V =75V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS motor drive, DC-DC converter, power switch and solenoid drive. A
Другие IGBT... STP130N10F3, STP13N60M2, STP13N65M2, STP13N80K5, STP13NK50Z, STP13NM50N, STP13NM60ND, STP140N8F7, IRFZ24N, STP1433A, STP14NK50ZFP, STP14NK60ZFP, STP150N10F7, STP150NF04, STP15N65M5, STP15N80K5, STP15N95K5