STP16N60M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFETin TO-220FP, IPAK, TO-220, IPAK, TO-247FeaturesTABTABVDSS @ RDS(on) Type IDTJmax max32 3 3211 2STF16N65M51TO-220FPTO-220STI16N65M5 IPAKSTP16N65M5 710 V

STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V