STP265N6F6AG Todos los transistores

 ..1. Size:689K  st
 stp265n6f6ag stw265n6f6ag.pdf

STP265N6F6AG, STW265N6F6AG Automotive N-channel 60 V, 2.3 m typ., 180 A STripFET F6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max I DS DS(on) D STP265N6F6AG 60 V 2.85 m 180 A STW265N6F6AG 60 V 2.85 m 180 A 3 3 Designed for automotive applications 2 2 1 Very low on-resistance 1 Very low g

 9.1. Size:800K  st
 stp26n60m2 stw26n60m2.pdf

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB V @ R DS DS(on) Order code I P D TOT T max. Jmax STP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 3 3 2 2 1 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

 9.2. Size:1039K  st
 stb26nm60n stp26nm60n.pdf

STB26NM60N, STP26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in D PAK and TO-220 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB STB26NM60N TAB 600 V 0.165 20 A STP26NM60N 100% avalanche tested 3 Low input capacitance and gate charge D2PAK TO-220 2 1 Low gate input resistance Application

 9.3. Size:1134K  st
 stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf

STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) Type VDSS ID max 3 2 3 1 2 STB26NM60N 600 V

 9.4. Size:703K  st
 sti260n6f6 stp260n6f6.pdf

STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 , 120 A TO-220, I PAK STripFET VI DeepGATE Power MOSFET Features Order codes VDSS RDS(on) max ID STP260N6F6 60 V

 9.5. Size:750K  st
 sti260n6f6 stp260n6f6.pdf

STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 , 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and I PAK packages Features Order codes VDSS RDS(on) max ID TAB TAB STI260N6F6 60 V

 9.6. Size:264K  st
 stp26n65dm2.pdf

STP26N65DM2 Datasheet N-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 package Features VDS RDS(on) max. ID PTOT Order code TAB STP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, T

 9.7. Size:1344K  st
 stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS(on) max ID 3 1 STB26NM60ND 2 3 D PAK 2 1 STF26NM60ND 650 V 0.175 21 A TO-220FP STP26NM60ND TAB STW26NM60ND 100% avalanche tested 3 3 2

 9.8. Size:205K  inchange semiconductor
 stp26nm60n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP26NM60N FEATURES Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage