IRFR3411PBF Todos los transistores

 

IRFR3411PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3411PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 48 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: TO-252AA
 

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IRFR3411PBF Datasheet (PDF)

 ..1. Size:230K  international rectifier
 irfr3411pbf irfu3411pbf.pdf pdf_icon

IRFR3411PBF

PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

 ..2. Size:287K  international rectifier
 irfr3411pbf.pdf pdf_icon

IRFR3411PBF

PD - 95371BIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

 ..3. Size:815K  cn vbsemi
 irfr3411pbf.pdf pdf_icon

IRFR3411PBF

IRFR3411PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.1. Size:112K  international rectifier
 irfr3411.pdf pdf_icon

IRFR3411PBF

PD - 94393IRFR3411IRFU3411 Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 100V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques toachieve extremely low on-

MOSTRAR MÁS

Otros transistores... STP25NM50N , STP25NM60N , STP260N6F6 , STP265N6F6AG , STP26NM60ND , STP270N04 , IRFR3303PBF , IRFR3410PBF , 12N60 , IRFR3412PBF , IRFR3418PBF , IRFR3504PBF , IRFR3504ZPBF , IRFR3505PBF , IRFR3518PBF , IRFR3607PBF , IRFR3704 .

History: IPP051N15N5 | MTB36N06V | TMAN11N90Z | IPP030N10N3 | RU30P4H | SFP035N95C3

 

 
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