IRFR3411PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR3411PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm

Encapsulados: TO-252AA

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IRFR3411PBF datasheet

 ..1. Size:230K  international rectifier
 irfr3411pbf irfu3411pbf.pdf pdf_icon

IRFR3411PBF

PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

 ..2. Size:287K  international rectifier
 irfr3411pbf.pdf pdf_icon

IRFR3411PBF

PD - 95371B IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

 ..3. Size:815K  cn vbsemi
 irfr3411pbf.pdf pdf_icon

IRFR3411PBF

IRFR3411PBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.1. Size:112K  international rectifier
 irfr3411.pdf pdf_icon

IRFR3411PBF

PD - 94393 IRFR3411 IRFU3411 Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 100V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to achieve extremely low on-

MOSTRAR MÁS

Otros transistores... STP25NM50N, STP25NM60N, STP260N6F6, STP265N6F6AG, STP26NM60ND, STP270N04, IRFR3303PBF, IRFR3410PBF, STP75NF75, IRFR3412PBF, IRFR3418PBF, IRFR3504PBF, IRFR3504ZPBF, IRFR3505PBF, IRFR3518PBF, IRFR3607PBF, IRFR3704