All MOSFET. IRFR3411PBF Datasheet

 

IRFR3411PBF Datasheet and Replacement


   Type Designator: IRFR3411PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 48 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO-252AA
 

 IRFR3411PBF substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRFR3411PBF Datasheet (PDF)

 ..1. Size:230K  international rectifier
 irfr3411pbf irfu3411pbf.pdf pdf_icon

IRFR3411PBF

PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

 ..2. Size:287K  international rectifier
 irfr3411pbf.pdf pdf_icon

IRFR3411PBF

PD - 95371BIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

 ..3. Size:815K  cn vbsemi
 irfr3411pbf.pdf pdf_icon

IRFR3411PBF

IRFR3411PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.1. Size:112K  international rectifier
 irfr3411.pdf pdf_icon

IRFR3411PBF

PD - 94393IRFR3411IRFU3411 Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 100V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques toachieve extremely low on-

SHOW MORE

Datasheet: STP25NM50N , STP25NM60N , STP260N6F6 , STP265N6F6AG , STP26NM60ND , STP270N04 , IRFR3303PBF , IRFR3410PBF , 12N60 , IRFR3412PBF , IRFR3418PBF , IRFR3504PBF , IRFR3504ZPBF , IRFR3505PBF , IRFR3518PBF , IRFR3607PBF , IRFR3704 .

Keywords - IRFR3411PBF MOSFET datasheet

 IRFR3411PBF cross reference
 IRFR3411PBF equivalent finder
 IRFR3411PBF lookup
 IRFR3411PBF substitution
 IRFR3411PBF replacement

 

 
Back to Top

 


 
.