IRFR3704PBF Todos los transistores

 

IRFR3704PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3704PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 98 nS
   Cossⓘ - Capacitancia de salida: 1085 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: TO-252AA
 

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IRFR3704PBF Datasheet (PDF)

 ..1. Size:221K  international rectifier
 irfr3704pbf irfu3704pbf.pdf pdf_icon

IRFR3704PBF

PD - 95034AIRFR3704PbFSMPS MOSFETIRFU3704PbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.5m 75Afor Telecom and Industrial usel High Frequency Buck Converters forComputer Processor Powerl 100% RG Testedl Lead-FreeBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully

 6.1. Size:266K  international rectifier
 irfr3704zpbf irfu3704zpbf.pdf pdf_icon

IRFR3704PBF

PD - 95442AIRFR3704ZPbFIRFU3704ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 8.4m 9.3nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pak

 6.2. Size:156K  international rectifier
 irfr3704 irfu3704.pdf pdf_icon

IRFR3704PBF

PD - 93887DIRFR3704SMPS MOSFETIRFU3704ApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.5m 75Afor Telecom and Industrial usel High Frequency Buck Converters for Computer Processor Powerl 100% RG TestedBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully Characterized Aval

 6.3. Size:243K  inchange semiconductor
 irfr3704z.pdf pdf_icon

IRFR3704PBF

isc N-Channel MOSFET Transistor IRFR3704Z, IIRFR3704ZFEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

MOSTRAR MÁS

Otros transistores... IRFR3412PBF , IRFR3418PBF , IRFR3504PBF , IRFR3504ZPBF , IRFR3505PBF , IRFR3518PBF , IRFR3607PBF , IRFR3704 , AON7410 , IRFR3704ZPBF , IRFR3706 , IRFR3706CPBF , IRFR3706PBF , IRFR3707 , IRFR3707PBF , IRFR3708PBF , IRFR3709ZPBF .

 

 
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