IRFR3708PBF Todos los transistores

 

IRFR3708PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3708PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 61 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 707 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: TO-252AA
     - Selección de transistores por parámetros

 

IRFR3708PBF Datasheet (PDF)

 ..1. Size:220K  international rectifier
irfr3708pbf irfu3708pbf.pdf pdf_icon

IRFR3708PBF

PD - 95071AIRFR3708PbFSMPS MOSFETIRFU3708PbFHEXFET Power MOSFETApplicationsl High Frequency DC-DC Isolated ConvertersVDSS RDS(on) max IDwith Synchronous Rectification for Telecom 30V 12.5m 61Aand Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGS D-Pak I-P

 6.1. Size:129K  international rectifier
irfr3708.pdf pdf_icon

IRFR3708PBF

PD - 93935BIRFR3708SMPS MOSFETIRFU3708HEXFET Power MOSFETApplications High Frequency DC-DC Isolated ConvertersVDSS RDS(on) max IDwith Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Vol

 6.2. Size:2739K  cn vbsemi
irfr3708tr.pdf pdf_icon

IRFR3708PBF

IRFR3708TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

 6.3. Size:243K  inchange semiconductor
irfr3708.pdf pdf_icon

IRFR3708PBF

isc N-Channel MOSFET Transistor IRFR3708, IIRFR3708FEATURESStatic drain-source on-resistance:RDS(on)12.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: TW1525SI | SVF7N60CF | IRF7309IPBF | IRF620S | WFY3N02 | APT904R2AN | 2SK736

 

 
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