IRFR3709ZPBF Todos los transistores

 

IRFR3709ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3709ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 86 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO-252AA
 

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IRFR3709ZPBF Datasheet (PDF)

 ..1. Size:265K  international rectifier
irfr3709zpbf irfu3709zpbf.pdf pdf_icon

IRFR3709ZPBF

PD - 95072AIRFR3709ZPbFIRFU3709ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara

 5.1. Size:300K  international rectifier
irfr3709zcpbf irfu3709zcpbf.pdf pdf_icon

IRFR3709ZPBF

PD - 96046IRFR3709ZCPbFIRFU3709ZCPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char

 5.2. Size:1606K  cn vbsemi
irfr3709zt.pdf pdf_icon

IRFR3709ZPBF

IRFR3709ZTwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB

 5.3. Size:846K  cn vbsemi
irfr3709ztr.pdf pdf_icon

IRFR3709ZPBF

IRFR3709ZTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

Otros transistores... IRFR3704PBF , IRFR3704ZPBF , IRFR3706 , IRFR3706CPBF , IRFR3706PBF , IRFR3707 , IRFR3707PBF , IRFR3708PBF , AON7506 , IRFR3710ZPBF , IRFR3711 , IRFR3711PBF , IRFR3711ZCPBF , IRFR3711ZPBF , IRFR3806PBF , IRFR3910PBF , IRFR3911PBF .

History: NTTFS002N04C | WNMD3014

 

 
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