IXFH75N10Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFH75N10Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 140 nC
   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 1300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO247

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IXFH75N10Q Datasheet (PDF)

..1. Size:151K ixys
ixfh75n10q ixft75n10q.pdf

Advanced Technical InformationIXFH 75N10Q VDSS = 100 VHiPerFETTMIXFT 75N10Q ID25 = 75 APower MOSFETs RDS(on) = 20 mWQ-Classt 200nsrr N-Channel Enhancement ModeAvalanche Rated, High dv/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VVGS Continuous

5.1. Size:94K ixys
ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 67 N10 100 V 67 A 25 mWPower MOSFETsIXFH/IXFM 75 N10 100 V 75 A 20 mWtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25

9.1. Size:296K 1
ixfh7n90.pdf

9.2. Size:80K ixys
ixfh76n06-11 ixfh76n07-11 ixfh76n06-12 ixfh76n07-12.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH 76 N06-11 60 V 76 A 11 mWPower MOSFETsIXFH 76 N06-12 60 V 76 A 12 mWIXFH 76 N07-11 70 V 76 A 11 mWN-Channel Enhancement ModeIXFH 76 N07-12 70 V 76 A 12 mWHigh dv/dt, Low trr, HDMOSTM FamilyPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 175C N06 60 VN07 70 VVDGR TJ = 25C to 175C; RGS = 10 k

9.3. Size:185K ixys
ixfv74n20p ixfv74n20ps ixfh74n20p.pdf

PolarHTTM Power VDSS = 200VIXFV74N20PID25 = 74AMOSFET HiPerFETTM IXFV74N20PS RDS(on) 34m IXFH74N20Ptrr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodePLUS220 (IXFV)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C 200 VSD (TAB)VDGR TJ = 25C to 175C, RGS = 1M 200

9.4. Size:166K ixys
ixfh7n100p.pdf

Polar TM HiPerFETTM VDSS = 1000VIXFA7N100PPower MOSFETs ID25 = 7AIXFP7N100P RDS(on) 1.9 IXFH7N100PN-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Conti

9.5. Size:244K ixys
ixfh76n15t2.pdf

TrenchT2TM HiperFETTM VDSS = 150VIXFA76N15T2ID25 = 76APower MOSFETIXFP76N15T2 RDS(on) 22m IXFH76N15T2TO-263 AA (IXFA)N-Channel Enhancement ModeAvalanche RatedFast Intrnsic Rectifier GSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 150 VVDGR TJ = 25C to 175C, RGS = 1M 150 V

9.6. Size:76K ixys
ixfh7n80 ixfm7n80.pdf

HiPerFETTM IXFH 7 N80 VDSS = 800 VPower MOSFETs IXFM 7 N80 ID (cont) = 7 ARDS(on) = 1.4 WN-Channel Enhancement Modetrr = 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C7 ATO-204 AA (IXFM

9.7. Size:52K ixys
ixfh70n15 ixft70n15.pdf

Advanced Technical InformationIXFH 70N15 VDSS = 150 VHiPerFETTMIXFT 70N15 ID25 = 70 APower MOSFETs RDS(on) = 28 mWtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 MW 150 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID2

9.8. Size:131K ixys
ixfh70n30q3 ixft70n30q3.pdf

Advance Technical InformationHiperFETTM VDSS = 300VIXFT70N30Q3Power MOSFETs ID25 = 70AIXFH70N30Q3 Q3-Class RDS(on) 54m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1M 300

9.9. Size:112K ixys
ixfh7n90q ixft7n90q.pdf

www.DataSheet.co.krAdvanced Technical InformationIXFH 7N90Q VDSS = 900 VHiPerFETTMIXFT 7N90Q ID25 = 7 APower MOSFETsRDS(on) = 1.5 WQ-ClassN-Channel Enhancement Modetrr 250 nsAvalanche Rated, Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM

Otros transistores... IXFH58N20Q , IXFH60N25Q , IXFH67N10 , IXFH6N100 , IXFH6N100Q , IXFH6N90 , IXFH70N15 , IXFH75N10 , IRF840 , IXFH76N07-11 , IXFH76N07-12 , IXFH7N80 , IXFH7N90 , IXFH80N10Q , IXFH80N20Q , IXFH8N80 , IXFH9N80 .

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