IXFH75N10Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advanced Technical InformationIXFH 75N10Q VDSS = 100 VHiPerFETTMIXFT 75N10Q ID25 = 75 APower MOSFETs RDS(on) = 20 mWQ-Classt 200nsrr N-Channel Enhancement ModeAvalanche Rated, High dv/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VVGS Continuous

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 67 N10 100 V 67 A 25 mWPower MOSFETsIXFH/IXFM 75 N10 100 V 75 A 20 mWtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25

VDSS ID25 RDS(on)HiPerFETTMIXFH 76 N06-11 60 V 76 A 11 mWPower MOSFETsIXFH 76 N06-12 60 V 76 A 12 mWIXFH 76 N07-11 70 V 76 A 11 mWN-Channel Enhancement ModeIXFH 76 N07-12 70 V 76 A 12 mWHigh dv/dt, Low trr, HDMOSTM FamilyPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 175C N06 60 VN07 70 VVDGR TJ = 25C to 175C; RGS = 10 k

PolarHTTM Power VDSS = 200VIXFV74N20PID25 = 74AMOSFET HiPerFETTM IXFV74N20PS RDS(on) 34m IXFH74N20Ptrr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodePLUS220 (IXFV)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C 200 VSD (TAB)VDGR TJ = 25C to 175C, RGS = 1M 200

Polar TM HiPerFETTM VDSS = 1000VIXFA7N100PPower MOSFETs ID25 = 7AIXFP7N100P RDS(on) 1.9 IXFH7N100PN-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Conti

TrenchT2TM HiperFETTM VDSS = 150VIXFA76N15T2ID25 = 76APower MOSFETIXFP76N15T2 RDS(on) 22m IXFH76N15T2TO-263 AA (IXFA)N-Channel Enhancement ModeAvalanche RatedFast Intrnsic Rectifier GSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 150 VVDGR TJ = 25C to 175C, RGS = 1M 150 V

HiPerFETTM IXFH 7 N80 VDSS = 800 VPower MOSFETs IXFM 7 N80 ID (cont) = 7 ARDS(on) = 1.4 WN-Channel Enhancement Modetrr = 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C7 ATO-204 AA (IXFM

Advanced Technical InformationIXFH 70N15 VDSS = 150 VHiPerFETTMIXFT 70N15 ID25 = 70 APower MOSFETs RDS(on) = 28 mWtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 MW 150 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID2

Advance Technical InformationHiperFETTM VDSS = 300VIXFT70N30Q3Power MOSFETs ID25 = 70AIXFH70N30Q3 Q3-Class RDS(on) 54m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1M 300

www.DataSheet.co.krAdvanced Technical InformationIXFH 7N90Q VDSS = 900 VHiPerFETTMIXFT 7N90Q ID25 = 7 APower MOSFETsRDS(on) = 1.5 WQ-ClassN-Channel Enhancement Modetrr 250 nsAvalanche Rated, Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM