IXFH75N10Q MOSFET Datasheet: N-Ch, 100V, 75A. Full specification with pinout and replacement list

IXFH75N10Q Specs and Replacement

   Type Designator: IXFH75N10Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO247

IXFH75N10Q substitution

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IXFH75N10Q datasheet

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Advanced Technical Information IXFH 75N10Q VDSS = 100 V HiPerFETTM IXFT 75N10Q ID25 = 75 A Power MOSFETs RDS(on) = 20 mW Q-Class t 200ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V VGS Continuous ... See More ⇒

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VDSS ID25 RDS(on) HiPerFETTM IXFH 76 N06-11 60 V 76 A 11 mW Power MOSFETs IXFH 76 N06-12 60 V 76 A 12 mW IXFH 76 N07-11 70 V 76 A 11 mW N-Channel Enhancement Mode IXFH 76 N07-12 70 V 76 A 12 mW High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 175 C N06 60 V N07 70 V VDGR TJ = 25 C to 175 C; RGS = 10 k... See More ⇒