IRFR3910PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR3910PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm

Encapsulados: TO-252AA

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IRFR3910PBF datasheet

 ..1. Size:392K  international rectifier
 irfr3910pbf irfu3910pbf.pdf pdf_icon

IRFR3910PBF

PD - 95079A IRFR3910PbF IRFU3910PbF Lead-Free www.irf.com 1 1/7/05 IRFR/U3910PbF 2 www.irf.com IRFR/U3910PbF www.irf.com 3 IRFR/U3910PbF 4 www.irf.com IRFR/U3910PbF www.irf.com 5 IRFR/U3910PbF 6 www.irf.com IRFR/U3910PbF www.irf.com 7 IRFR/U3910PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat

 6.1. Size:141K  international rectifier
 irfr3910.pdf pdf_icon

IRFR3910PBF

PD - 91364B IRFR/U3910 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR3910) VDSS = 100V Straight Lead (IRFU3910) Advanced Process Technology RDS(on) = 0.115 Fast Switching G Fully Avalanche Rated ID = 16A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resi

 6.2. Size:856K  cn vbsemi
 irfr3910tr.pdf pdf_icon

IRFR3910PBF

IRFR3910TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

 6.3. Size:242K  inchange semiconductor
 irfr3910.pdf pdf_icon

IRFR3910PBF

isc N-Channel MOSFET Transistor IRFR3910, IIRFR3910 FEATURES Static drain-source on-resistance RDS(on) 115m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

MOSTRAR MÁS

Otros transistores... IRFR3708PBF, IRFR3709ZPBF, IRFR3710ZPBF, IRFR3711, IRFR3711PBF, IRFR3711ZCPBF, IRFR3711ZPBF, IRFR3806PBF, IRFP450, IRFR3911PBF, IRFR4104PBF, IRFR4105PBF, IRFR4105ZPBF, STP270N4F3, STP270N8F7, STP28N60M2, STP28N65M2