IRFR3910PBF MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFR3910PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO-252AA

IRFR3910PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFR3910PBF Datasheet (PDF)

..1. Size:392K international rectifier
irfr3910pbf irfu3910pbf.pdf

PD - 95079AIRFR3910PbFIRFU3910PbF Lead-Freewww.irf.com 11/7/05IRFR/U3910PbF2 www.irf.comIRFR/U3910PbFwww.irf.com 3IRFR/U3910PbF4 www.irf.comIRFR/U3910PbFwww.irf.com 5IRFR/U3910PbF6 www.irf.comIRFR/U3910PbFwww.irf.com 7IRFR/U3910PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

..2. Size:392K infineon
irfr3910pbf irfu3910pbf.pdf

6.1. Size:141K international rectifier
irfr3910.pdf

PD - 91364BIRFR/U3910HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR3910)VDSS = 100V Straight Lead (IRFU3910) Advanced Process TechnologyRDS(on) = 0.115 Fast SwitchingG Fully Avalanche RatedID = 16ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resi

6.2. Size:856K cn vbsemi
irfr3910tr.pdf

IRFR3910TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

6.3. Size:242K inchange semiconductor
irfr3910.pdf

isc N-Channel MOSFET Transistor IRFR3910, IIRFR3910FEATURESStatic drain-source on-resistance:RDS(on)115mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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IRFR3910PBF MOSFET. Datasheet pdf. Equivalent

IRFR3910PBF Datasheet (PDF)

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