IXFH7N80 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFH7N80 datasheet

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ixfh7n80 ixfm7n80.pdf pdf_icon

HiPerFETTM IXFH 7 N80 VDSS = 800 V Power MOSFETs IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W N-Channel Enhancement Mode trr = 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C7 A TO-204 AA (IXFM

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ixfh7n90.pdf pdf_icon

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ixfh7n100p.pdf pdf_icon

Polar TM HiPerFETTM VDSS = 1000V IXFA7N100P Power MOSFETs ID25 = 7A IXFP7N100P RDS(on) 1.9 IXFH7N100P N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Conti

8.3. Size:112K ixys
ixfh7n90q ixft7n90q.pdf pdf_icon

www.DataSheet.co.kr Advanced Technical Information IXFH 7N90Q VDSS = 900 V HiPerFETTM IXFT 7N90Q ID25 = 7 A Power MOSFETs RDS(on) = 1.5 W Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V VGSM

Otros transistores... IXFH6N100 , IXFH6N100Q , IXFH6N90 , IXFH70N15 , IXFH75N10 , IXFH75N10Q , IXFH76N07-11 , IXFH76N07-12 , IRFP460 , IXFH7N90 , IXFH80N10Q , IXFH80N20Q , IXFH8N80 , IXFH9N80 , IXFJ13N50 , IXFJ32N50Q , IXFJ40N30 .