All MOSFET. IXFH7N80 Datasheet

 

IXFH7N80 Datasheet and Replacement


   Type Designator: IXFH7N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO247
 

 IXFH7N80 substitution

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IXFH7N80 Datasheet (PDF)

 ..1. Size:76K  ixys
 ixfh7n80 ixfm7n80.pdf pdf_icon

IXFH7N80

HiPerFETTM IXFH 7 N80 VDSS = 800 VPower MOSFETs IXFM 7 N80 ID (cont) = 7 ARDS(on) = 1.4 WN-Channel Enhancement Modetrr = 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C7 ATO-204 AA (IXFM

 8.1. Size:296K  1
 ixfh7n90.pdf pdf_icon

IXFH7N80

 8.2. Size:166K  ixys
 ixfh7n100p.pdf pdf_icon

IXFH7N80

Polar TM HiPerFETTM VDSS = 1000VIXFA7N100PPower MOSFETs ID25 = 7AIXFP7N100P RDS(on) 1.9 IXFH7N100PN-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Conti

 8.3. Size:112K  ixys
 ixfh7n90q ixft7n90q.pdf pdf_icon

IXFH7N80

www.DataSheet.co.krAdvanced Technical InformationIXFH 7N90Q VDSS = 900 VHiPerFETTMIXFT 7N90Q ID25 = 7 APower MOSFETsRDS(on) = 1.5 WQ-ClassN-Channel Enhancement Modetrr 250 nsAvalanche Rated, Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM

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