STP400N4F6 Todos los transistores

 

STP400N4F6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STP400N4F6
   Código: 400N4F6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 300 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 377 nC
   Conductancia de drenaje-sustrato (Cd): 1740 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0017 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET STP400N4F6

 

STP400N4F6 Datasheet (PDF)

 ..1. Size:174K  st
sti400n4f6 stp400n4f6.pdf

STP400N4F6 STP400N4F6

STI400N4F6, STP400N4F6N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packagesDatasheet - preliminary dataFeaturesOrder codes VDSS RDS(on) max IDTABTABSTI400N4F640 V

 9.1. Size:108K  st
stp40n03l-20.pdf

STP400N4F6 STP400N4F6

STP40N03L-20N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP40N03L-20 30 V

 9.2. Size:239K  st
stp40nf10l.pdf

STP400N4F6 STP400N4F6

STP40NF10LN-channel 100V - 0.028 - 40A TO-220Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF10L 100V

 9.3. Size:440K  st
sti40n65m2 stp40n65m2.pdf

STP400N4F6 STP400N4F6

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested

 9.4. Size:246K  st
stp40nf12.pdf

STP400N4F6 STP400N4F6

STP40NF12N-channel 120V - 0.028 - 40A TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF12 120V

 9.5. Size:451K  st
stp40nf10.pdf

STP400N4F6 STP400N4F6

STP40NF10N-channel 100 V, 0.025 , 50 A TO-220low gate charge STripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max. IDSTP40NF10 100 V

 9.6. Size:477K  st
stp40nf20 stf40nf20 stb40nf20 stw40nf20.pdf

STP400N4F6 STP400N4F6

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

 9.7. Size:336K  st
stp40n10 stp40n10fi.pdf

STP400N4F6 STP400N4F6

 9.8. Size:501K  st
stb40n20 stb40n20 stp40n20 stp40n20fp stw40n20 stp40n20 stw40n20.pdf

STP400N4F6 STP400N4F6

STP40N20 - STF40N20STB40N20 - STW40N20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PW3STB40N20 200V

 9.9. Size:1189K  st
stb40n60m2 stp40n60m2 stw40n60m2.pdf

STP400N4F6 STP400N4F6

STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous

 9.10. Size:337K  st
stp40n05.pdf

STP400N4F6 STP400N4F6

 9.11. Size:267K  st
stp40nf03l.pdf

STP400N4F6 STP400N4F6

STP40NF03LN - CHANNEL 30V - 0.020 - 40A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP40NF03L 30 V

 9.12. Size:685K  st
stp40nf10 std40nf10.pdf

STP400N4F6 STP400N4F6

STP40NF10STD40NF10 - STB40NF10N-CHANNEL 100V - 0.024 - 50A TO-220/DPAK/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP40NF10 100 V

 9.13. Size:429K  st
stf40nf03l stp40nf03l.pdf

STP400N4F6 STP400N4F6

STF40NF03LSTP40NF03LN-channel 30 V, 0.018 , 40 A TO-220, TO-220FPSTripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTF40NF03L 30 V 0.022 23 ASTP40NF03L 30 V 0.022 40 A3 3 Low threshold device2 21 1ApplicationTO-220TO-220FP Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique "single f

 9.14. Size:81K  st
stp40ns15.pdf

STP400N4F6 STP400N4F6

STP40NS15N-CHANNEL 150V - 0.042 - 40A TO-220MESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP40NS15 150 V

 9.15. Size:484K  st
stb40nf20 stf40nf20 stp40nf20 stw40nf20.pdf

STP400N4F6 STP400N4F6

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

 9.16. Size:323K  st
stp40ne03l-20.pdf

STP400N4F6 STP400N4F6

STP40NE03L-20N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP40NE03L-20 30 V

 9.17. Size:373K  st
stp40nf10 std40nf10.pdf

STP400N4F6 STP400N4F6

STD40NF10STP40NF10N-channel 100V - 0.025 - 50A TO-220 / DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) Max IDSTD40NF10 100V

 9.18. Size:261K  inchange semiconductor
stp40nf10.pdf

STP400N4F6 STP400N4F6

isc N-ChannelMOSFET Transistor STP40NF10FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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