STP400N4F6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STP400N4F6
Маркировка: 400N4F6
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 377 nC
Выходная емкость (Cd): 1740 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0017 Ohm
Тип корпуса: TO-220
Аналог (замена) для STP400N4F6
STP400N4F6 Datasheet (PDF)
sti400n4f6 stp400n4f6.pdf
STI400N4F6, STP400N4F6N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packagesDatasheet - preliminary dataFeaturesOrder codes VDSS RDS(on) max IDTABTABSTI400N4F640 V
stp40n03l-20.pdf
STP40N03L-20N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP40N03L-20 30 V
stp40nf10l.pdf
STP40NF10LN-channel 100V - 0.028 - 40A TO-220Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF10L 100V
sti40n65m2 stp40n65m2.pdf
STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested
stp40nf12.pdf
STP40NF12N-channel 120V - 0.028 - 40A TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF12 120V
stp40nf10.pdf
STP40NF10N-channel 100 V, 0.025 , 50 A TO-220low gate charge STripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max. IDSTP40NF10 100 V
stp40nf20 stf40nf20 stb40nf20 stw40nf20.pdf
STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V
stb40n20 stb40n20 stp40n20 stp40n20fp stw40n20 stp40n20 stw40n20.pdf
STP40N20 - STF40N20STB40N20 - STW40N20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PW3STB40N20 200V
stb40n60m2 stp40n60m2 stw40n60m2.pdf
STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous
stp40nf03l.pdf
STP40NF03LN - CHANNEL 30V - 0.020 - 40A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP40NF03L 30 V
stp40nf10 std40nf10.pdf
STP40NF10STD40NF10 - STB40NF10N-CHANNEL 100V - 0.024 - 50A TO-220/DPAK/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP40NF10 100 V
stf40nf03l stp40nf03l.pdf
STF40NF03LSTP40NF03LN-channel 30 V, 0.018 , 40 A TO-220, TO-220FPSTripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTF40NF03L 30 V 0.022 23 ASTP40NF03L 30 V 0.022 40 A3 3 Low threshold device2 21 1ApplicationTO-220TO-220FP Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique "single f
stp40ns15.pdf
STP40NS15N-CHANNEL 150V - 0.042 - 40A TO-220MESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP40NS15 150 V
stb40nf20 stf40nf20 stp40nf20 stw40nf20.pdf
STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V
stp40ne03l-20.pdf
STP40NE03L-20N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP40NE03L-20 30 V
stp40nf10 std40nf10.pdf
STD40NF10STP40NF10N-channel 100V - 0.025 - 50A TO-220 / DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) Max IDSTD40NF10 100V
stp40nf10.pdf
isc N-ChannelMOSFET Transistor STP40NF10FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
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