STP45N10F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP45N10F7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET STP45N10F7
STP45N10F7 Datasheet (PDF)
std45n10f7 sti45n10f7 stp45n10f7.pdf
STD45N10F7, STI45N10F7, STP45N10F7N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS ID PTOTmax.(1)13 STD45N10F7DPAK212 STI45N10F7 100 V 0.018 45 A 60 WI PAKTABSTP45N10F71. @ VGS = 10 V Ultra low on-resistance32
stp45n10f7.pdf
Isc N-Channel MOSFET Transistor STP45N10F7FEATURESStatic drain-source on-resistance:RDS(on)18m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20
stp45n10.pdf
STP45N10STP45N10FIN - CHANNEL 100V - 0.027 - 45A - TO-220/TO-220FIPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP45N10 100 V
stb45nf06t4 stb45nf06 stp45nf06.pdf
STB45NF06STP45NF06N-channel 60 V, 0.023 , 38 A TO-220, D2PAKSTripFETTM II Power MOSFETFeaturesType VDSS RDS(on) IDSTP45NF06 60 V
stp45ne06.pdf
STP45NE06STP45NE06FPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06 60 V
stp45ne06 stp45ne06fp.pdf
STP45NE06STP45NE06FPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06 60 V
stp45nf3ll.pdf
STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-CHANNEL 30V - 0.014 - 45A TO-220 - TO220FP - D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP45NF3LL 30 V
stp45nf06.pdf
STP45NF06N-CHANNEL 60V - 0.022 - 38A TO-220STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NF06 60V
stb45n65m5 stf45n65m5 stp45n65m5.pdf
STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa
stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf
STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V
stp45nf06l.pdf
STP45NF06LSTB45NF06LN-CHANNEL 60V - 0.022 - 38ATO-220/ D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP45NF06L 60 V
stp45n60dm6 stw45n60dm6.pdf
STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP45N60DM6 600 V 0.099 30 A STW45N60DM6 33 Fast-recovery body diode 221 Lower R x area vs previous generation DS(on)1 Low gate charge, input capacitan
stp45nf3ll stb45nf3ll.pdf
STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAKSTripFET II power MOSFETGeneral featuresType VDSS RDS(on) ID33STB45NF3LL 30V
stp45ne06l.pdf
STP45NE06LSTP45NE06LFPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06L 60 V
stp45n65m5.pdf
isc N-Channel MOSFET Transistor STP45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
stp45nf06.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP45NF06FEATURESTypical R (on)=0.022DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATING
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918