STP45N10F7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STP45N10F7
Маркировка: 45N10F7
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 45 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 25 nC
Время нарастания (tr): 17 ns
Выходная емкость (Cd): 360 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.018 Ohm
Тип корпуса: TO-220
Аналог (замена) для STP45N10F7
STP45N10F7 Datasheet (PDF)
std45n10f7 sti45n10f7 stp45n10f7.pdf
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STD45N10F7, STI45N10F7, STP45N10F7N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS ID PTOTmax.(1)13 STD45N10F7DPAK212 STI45N10F7 100 V 0.018 45 A 60 WI PAKTABSTP45N10F71. @ VGS = 10 V Ultra low on-resistance32
stp45n10f7.pdf
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Isc N-Channel MOSFET Transistor STP45N10F7FEATURESStatic drain-source on-resistance:RDS(on)18m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20
stp45n10.pdf
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STP45N10STP45N10FIN - CHANNEL 100V - 0.027 - 45A - TO-220/TO-220FIPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP45N10 100 V
stb45nf06t4 stb45nf06 stp45nf06.pdf
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STB45NF06STP45NF06N-channel 60 V, 0.023 , 38 A TO-220, D2PAKSTripFETTM II Power MOSFETFeaturesType VDSS RDS(on) IDSTP45NF06 60 V
stp45ne06.pdf
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STP45NE06STP45NE06FPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06 60 V
stp45ne06 stp45ne06fp.pdf
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STP45NE06STP45NE06FPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06 60 V
stp45nf3ll.pdf
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STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-CHANNEL 30V - 0.014 - 45A TO-220 - TO220FP - D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP45NF3LL 30 V
stp45nf06.pdf
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STP45NF06N-CHANNEL 60V - 0.022 - 38A TO-220STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NF06 60V
stb45n65m5 stf45n65m5 stp45n65m5.pdf
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STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa
stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf
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STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V
stp45nf06l.pdf
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STP45NF06LSTB45NF06LN-CHANNEL 60V - 0.022 - 38ATO-220/ D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP45NF06L 60 V
stp45n60dm6 stw45n60dm6.pdf
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STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP45N60DM6 600 V 0.099 30 A STW45N60DM6 33 Fast-recovery body diode 221 Lower R x area vs previous generation DS(on)1 Low gate charge, input capacitan
stp45nf3ll stb45nf3ll.pdf
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STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAKSTripFET II power MOSFETGeneral featuresType VDSS RDS(on) ID33STB45NF3LL 30V
stp45ne06l.pdf
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STP45NE06LSTP45NE06LFPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06L 60 V
stp45n65m5.pdf
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isc N-Channel MOSFET Transistor STP45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
stp45nf06.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP45NF06FEATURESTypical R (on)=0.022DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATING
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
![STP45N10F7](https://alltransistors.com/images/us.png)
![STP45N10F7](https://alltransistors.com/images/es.png)
![STP45N10F7](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C