STP4931 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP4931
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOP-8

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STP4931 Datasheet (PDF)

..1. Size:325K stansontech
stp4931.pdf

STP4931STP4931STP4931STP4931Dual P Channel Enhancement Mode MOSFET-8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP4931 is the dual P-Channel logic enhancement mode power field effect transistorsare produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly

9.1. Size:386K semtron
stp4953a.pdf

STP4953A -30V Dual P-Channel Fast Switching MOSFETsDESCRIPTIONFEATUREThe STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m(typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology

9.2. Size:431K stansontech
stp4925.pdf

STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power

9.3. Size:485K stansontech
stp4953.pdf

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli

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