STP4931 MOSFET: P-Ch, 20V, 8.5A. Full datasheet with pinout, specifications and replacement transistor list

STP4931 Datasheet (PDF)

..1. Size:325K stansontech
stp4931.pdf pdf_icon

STP4931STP4931STP4931STP4931Dual P Channel Enhancement Mode MOSFET-8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP4931 is the dual P-Channel logic enhancement mode power field effect transistorsare produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly

9.1. Size:386K semtron
stp4953a.pdf pdf_icon

STP4953A -30V Dual P-Channel Fast Switching MOSFETsDESCRIPTIONFEATUREThe STP4953A is the Dual P-Channel logic -30V/-5.3A, RDS(ON) =46m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.6A, RDS(ON) =75m(typ.)@VGS =-4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology

9.2. Size:431K stansontech
stp4925.pdf pdf_icon

STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power

9.3. Size:485K stansontech
stp4953.pdf pdf_icon

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backli

Datasheet: STP4435A , STP45N10F7 , STP45N65M5 , STP45NE06 , STP45NE06FP , STP46NF30 , STP4803 , STP4925 , AO3400 , STP4953 , STP4953A , STP4N80K5 , STP4NA90 , STP4NA90FI , STP4NB100 , STP4NB50 , STP4NB80 .