IXFK100N10 Todos los transistores

 ..1. Size:117K  ixys
 ixfk100n10 ixfn150n10.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFK100N10 100 V 100 A 12 mW Power MOSFETs IXFN150N10 100 V 150 A 12 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 100 100 V G (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 100 V D S VGS Continuous 20 20 V miniBLOC, SOT

 6.1. Size:159K  ixys
 ixfk100n65x2 ixfx100n65x2.pdf

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK100N65X2 Power MOSFET ID25 = 100A IXFX100N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS

 6.2. Size:96K  ixys
 ixfx100n25 ixfk100n25.pdf

IXFX 100N25 VDSS = 250 V HiPerFETTM IXFK 100N25 ID25 = 100 A Power MOSFETs RDS(on) = 27 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET c

 6.3. Size:96K  ixys
 ixfk100n25.pdf

IXFX 100N25 VDSS = 250 V HiPerFETTM IXFK 100N25 ID25 = 100 A Power MOSFETs RDS(on) = 27 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET c

 6.4. Size:112K  ixys
 ixfk100n20 ixfn90n20 ixfn106n20.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t