IXFK100N10 MOSFET Datasheet: N-Ch, 100V, 100A. Full specification with pinout and replacement list

IXFK100N10 Specs and Replacement

Type Designator: IXFK100N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 3200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO264

IXFK100N10 substitution

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IXFK100N10 datasheet

..1. Size:117K ixys
ixfk100n10 ixfn150n10.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK100N10 100 V 100 A 12 mW Power MOSFETs IXFN150N10 100 V 150 A 12 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 100 100 V G (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 100 V D S VGS Continuous 20 20 V miniBLOC, SOT... See More ⇒

6.1. Size:159K ixys
ixfk100n65x2 ixfx100n65x2.pdf pdf_icon

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK100N65X2 Power MOSFET ID25 = 100A IXFX100N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS... See More ⇒

6.2. Size:96K ixys
ixfx100n25 ixfk100n25.pdf pdf_icon

IXFX 100N25 VDSS = 250 V HiPerFETTM IXFK 100N25 ID25 = 100 A Power MOSFETs RDS(on) = 27 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET c... See More ⇒

6.3. Size:96K ixys
ixfk100n25.pdf pdf_icon