STP75N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP75N20
Código: P75N20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 190 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 84 nC
Tiempo de subida (tr): 33 nS
Conductancia de drenaje-sustrato (Cd): 640 pF
Resistencia entre drenaje y fuente RDS(on): 0.034 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET STP75N20
STP75N20 Datasheet (PDF)
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stp75nf75fp.pdf
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stp75nf75.pdf
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