STP75N20 - Даташиты. Аналоги. Основные параметры

STB75N20STP75N20 - STW75N20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75N20 200V

STB75NF75STP75NF75 - STP75NF75FPN-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF75 75V

STP75NF75LSTB75NF75L STB75NF75L-1N-CHANNEL 75V - 0.009 - 75A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB75NF75L/-1 75 V

STP75NS04ZN-channel Clamped - 7m - 80A - TO-220Fully protected MESH Overlay III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP75NS04Z Clamped

STB75NF75STP75NF75 - STP75NF75FPN-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF75 75V

STD75N3LLH6, STP75N3LLH6STU75N3LLH6, STU75N3LLH6-SN-channel 30 V, 0.0042 , 75 A, DPAK, TO-220, IPAK, Short IPAKSTripFET VI DeepGATE Power MOSFETFeaturesTABTABOrder codes VDSS RDS(on) max ID31STD75N3LLH6

STP75N75F4N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATEPower MOSFET in a TO-220 packageDatasheet production dataFeaturesTABType VDSS RDS(on) max IDSTP75N75F4 75 V

STB75NF20STP75NF20 - STW75NF20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF20 200V

STP75NE75STP75NE75FPN - CHANNEL 75V - 0.01 - 75A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP75NE75 75 V

STP75NF68N-channel 68 V, 0.010 , 80 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP75NF68 68 V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP75NF75FPFEATURESExcellent switching performanceWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP75NF75FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 0.011(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSuitable as primary switch in advanced hi