STP80NE03L-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STP80NE03L-06N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP80NE03L-06 30 V

STP80NE03L-06N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(o n) IDSTP80NE03L-06 30 V

STP80NE06-10N-CHANNEL 60V - 0.0085 - 80A TO-220"SINGLE FEATURE SIZE" MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP80NE06-10 60 V

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

STP80NF10FPN-channel 100V - 0.012 - 38A - TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID(1)STP80NF10FP 100V

STP80NF55-08STB80NF55-08 STB80NF55-08-1N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55-08/-1 55 V

STP80N03L-06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORTENTATIVE DATA TYPE V R IDSS DS(on) DSTP80N03L-06 30 V

STB80NF55L-06STP80NF55L-06N-CHANNEL 55V - 0.005 - 80A DPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55L-06 55 V

STB80NF10STP80NF10N-channel 100 V, 0.012 , 80 A, TO-220, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF10 100 V

STP80NS04ZBN-CHANNEL CLAMPED 7.5m - 80A TO-220FULLY PROTECTED MESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NS04ZB CLAMPED

STP80NF70N-channel 68 V, 0.0082 , 98 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF70 68 V

STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF75L 75 V

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESCR

STP80NF03L-04STB80NF03L-04 STB80NF03L-04-1N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF03L-04/-1 30 V

STP80NF03LN-CHANNEL 30V - 0.004 - 80ATO-220STripFET II MOSFETTYPE VDSS RDS(on) IDSTP80NF03L 30 V

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

STP80NS04ZN-CHANNEL CLAMPED 7.5m - 80A TO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP80NS04Z CLAMPED

STP80NF06 - STB80NF06STW80NF06N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB80NF06 60V

STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF75L 75 V

STP80N70F4N-channel 68 V, 8.2 m typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDSTP80N70F4 68 V

STB80N20M5STP80N20M5N-channel 200 V, 0.019 , 61 A, TO-220, D2PAKMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Type IDTJmax maxSTB80N20M5 61 A200 V

STP80N6F6Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTP80N6F6 60 V 5 m 80 A(1)1. Current limited by package3 Designed for automotive applications and 21AEC-Q101 qualified Low gate chargeTO-220 Very low on-resistance

STP80NF10STP80NF10FPN-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FPLOW GATE CHARGE STripFETII POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF10 100 V

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A

STP80NF12N-channel 120 V, 0.013 , 80 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF12 120 V

STP80N70F6N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 packageDatasheet - production dataFeaturesTABVDSS Order code RDS(on) max. ID PTOTmax.

STP80N06-10N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP80N06-10 60 V

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

STP80N05-09N - CHANNEL ENHANCEMENT MODEULTRA HIGH DENSITY POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP80N05-09 50 V

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1 TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESC

STP80NF55-07 N - CHANNEL 55V - 0.0055 - 80A - TO-220STripFET POWER MOSFETTARGET DATATYPE VDSS RDS(on) IDSTP80NF55-07 55 V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP80NF55-06FEATURESTypical R (on)=0.005DSExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid and relay driversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor STP80NF12FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP80N10F7FEATURESExtremely low gate chargeUltra low on-resistanceLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-