STP80NE03L-06 - параметры транзистора MOSFET, его аналоги, datasheet

STP80NE03L-06 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: STP80NE03L-06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 22 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 95 nC
   trⓘ - Время нарастания: 260 ns
   Cossⓘ - Выходная емкость: 1500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO-220

Аналог (замена) для STP80NE03L-06

- подбор MOSFET транзистора по параметрам

STP80NE03L-06 Datasheet (PDF)

..1. Size:185K st
stp80ne03l-06.pdf pdf_icon

STP80NE03L-06N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP80NE03L-06 30 V

4.1. Size:58K st
stp80ne03l.pdf pdf_icon

STP80NE03L-06N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(o n) IDSTP80NE03L-06 30 V

6.1. Size:235K st
stp80ne06-10.pdf pdf_icon

STP80NE06-10N-CHANNEL 60V - 0.0085 - 80A TO-220"SINGLE FEATURE SIZE" MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP80NE06-10 60 V

8.1. Size:447K st
stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf pdf_icon

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

8.2. Size:232K st
stp80nf10fp.pdf pdf_icon

STP80NF10FPN-channel 100V - 0.012 - 38A - TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID(1)STP80NF10FP 100V

8.3. Size:353K st
stp80nf55.pdf pdf_icon

STP80NF55-08STB80NF55-08 STB80NF55-08-1N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55-08/-1 55 V

8.4. Size:77K st
stp80n03l-06.pdf pdf_icon

STP80N03L-06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORTENTATIVE DATA TYPE V R IDSS DS(on) DSTP80N03L-06 30 V

8.5. Size:399K st
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STB80NF55L-06STP80NF55L-06N-CHANNEL 55V - 0.005 - 80A DPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55L-06 55 V

8.6. Size:579K st
stb80nf10 stp80nf10.pdf pdf_icon

STB80NF10STP80NF10N-channel 100 V, 0.012 , 80 A, TO-220, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF10 100 V

8.7. Size:115K st
stp80ns04zb.pdf pdf_icon

STP80NS04ZBN-CHANNEL CLAMPED 7.5m - 80A TO-220FULLY PROTECTED MESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NS04ZB CLAMPED

8.8. Size:440K st
stp80nf70.pdf pdf_icon

STP80NF70N-channel 68 V, 0.0082 , 98 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF70 68 V

8.9. Size:377K st
stb80nf75l stp80nf75l.pdf pdf_icon

STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF75L 75 V

8.10. Size:339K st
stp80nf55l-08.pdf pdf_icon

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESCR

8.11. Size:360K st
stp80nf03l-04.pdf pdf_icon

STP80NF03L-04STB80NF03L-04 STB80NF03L-04-1N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF03L-04/-1 30 V

8.12. Size:209K st
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STP80NF03LN-CHANNEL 30V - 0.004 - 80ATO-220STripFET II MOSFETTYPE VDSS RDS(on) IDSTP80NF03L 30 V

8.13. Size:362K st
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf pdf_icon

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

8.14. Size:294K st
stp80ns04z.pdf pdf_icon

STP80NS04ZN-CHANNEL CLAMPED 7.5m - 80A TO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP80NS04Z CLAMPED

8.15. Size:308K st
stp80nf06 stb80nf06 stw80nf06.pdf pdf_icon

STP80NF06 - STB80NF06STW80NF06N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB80NF06 60V

8.16. Size:368K st
stp80nf75l.pdf pdf_icon

STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF75L 75 V

8.17. Size:653K st
stp80n70f4.pdf pdf_icon

STP80N70F4N-channel 68 V, 8.2 m typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDSTP80N70F4 68 V

8.18. Size:932K st
stb80n20m5 stp80n20m5.pdf pdf_icon

STB80N20M5STP80N20M5N-channel 200 V, 0.019 , 61 A, TO-220, D2PAKMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Type IDTJmax maxSTB80N20M5 61 A200 V

8.19. Size:456K st
stp80n6f6.pdf pdf_icon

STP80N6F6Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTP80N6F6 60 V 5 m 80 A(1)1. Current limited by package3 Designed for automotive applications and 21AEC-Q101 qualified Low gate chargeTO-220 Very low on-resistance

8.20. Size:334K st
stp80nf10-fp.pdf pdf_icon

STP80NF10STP80NF10FPN-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FPLOW GATE CHARGE STripFETII POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF10 100 V

8.21. Size:1361K st
std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf pdf_icon

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A

8.22. Size:267K st
stp80nf12.pdf pdf_icon

STP80NF12N-channel 120 V, 0.013 , 80 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF12 120 V

8.23. Size:773K st
stp80n70f6.pdf pdf_icon

STP80N70F6N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 packageDatasheet - production dataFeaturesTABVDSS Order code RDS(on) max. ID PTOTmax.

8.24. Size:77K st
stp80n06-10.pdf pdf_icon

STP80N06-10N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP80N06-10 60 V

8.25. Size:437K st
stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf pdf_icon

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

8.26. Size:114K st
stp80n05-09.pdf pdf_icon

STP80N05-09N - CHANNEL ENHANCEMENT MODEULTRA HIGH DENSITY POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP80N05-09 50 V

8.27. Size:195K st
stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf pdf_icon

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1 TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESC

8.28. Size:36K st
stp80nf55-07.pdf pdf_icon

STP80NF55-07 N - CHANNEL 55V - 0.0055 - 80A - TO-220STripFET POWER MOSFETTARGET DATATYPE VDSS RDS(on) IDSTP80NF55-07 55 V

8.29. Size:206K inchange semiconductor
stp80nf55-06.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP80NF55-06FEATURESTypical R (on)=0.005DSExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid and relay driversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T

8.30. Size:261K inchange semiconductor
stp80nf12.pdf pdf_icon

isc N-Channel MOSFET Transistor STP80NF12FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

8.31. Size:206K inchange semiconductor
stp80n10f7.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP80N10F7FEATURESExtremely low gate chargeUltra low on-resistanceLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

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