STU7N105K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STP7N105K5, STU7N105K5, STW7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - preliminary dataFeatures TABOrder codes VDS RDS(on) max. ID PTOTSTP7N105K5321STU7N105K5 1050 V 2 4 A 110 W 32TO-2201 STW7N105K5TO-247TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F

STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9 5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V

STU7NB90STU7NB90IN-CHANNEL 900V - 1.1 - 7.3 A Max220/Max220IPowerMesh MOSFETTYPE VDSS RDS(on) IDSTU7NB90 900 V

STU7NA80N - CHANNEL 800V - 1.3 - 6.5A - Max220FAST POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTU7NA80 800 V

STD7N80K5, STP7N80K5, STU7N80K5N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on)max ID PTOT2 31STD7N80K5DPAKSTP7N80K5 800 V 1.2 6 A 110 WTABSTU7N80K5TAB Worldwide best FOM (figure of merit)3 Ultra low gate charge2312

STU7NF25N-channel 250 V, 0.29 typ., 8 A STripFET II Power MOSFET in IPAK packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max. IDTABSTU7NF25 250 V 0.42 8 A 100% avalanche tested3 175 C junction temperature21ApplicationsIPAK Switching applicationsDescriptionThis Power MOSFET has been developed using Figure 1. Internal sche

STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21

STU7NB100N - CHANNEL 1000V - 1.2 - 7.3A - Max220PowerMESH MOSFETPRELIMINARY DATA TYPE VDSS RDS(on) IDSTU7NB100 1000 V

STU7NA90N - CHANNEL 900V - 1.05 - 7A - Max220FAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTU7NA90 900 V