STU7N105K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STU7N105K5
   Código: 7N105K5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1050 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: IPAK

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STU7N105K5 Datasheet (PDF)

..1. Size:1031K st
stp7n105k5 stu7n105k5 stw7n105k5.pdf

STP7N105K5, STU7N105K5, STW7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - preliminary dataFeatures TABOrder codes VDS RDS(on) max. ID PTOTSTP7N105K5321STU7N105K5 1050 V 2 4 A 110 W 32TO-2201 STW7N105K5TO-247TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F

9.1. Size:596K st
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9.2. Size:876K st
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9.3. Size:882K st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf

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9.4. Size:403K st
stu7nb90-i.pdf

STU7NB90STU7NB90IN-CHANNEL 900V - 1.1 - 7.3 A Max220/Max220IPowerMesh MOSFETTYPE VDSS RDS(on) IDSTU7NB90 900 V

9.5. Size:45K st
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9.6. Size:995K st
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9.7. Size:736K st
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9.8. Size:1199K st
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STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21

9.9. Size:45K st
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