STU7N105K5 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STU7N105K5
   Marking Code: 7N105K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: IPAK

STU7N105K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STU7N105K5 Datasheet (PDF)

..1. Size:1031K st
stp7n105k5 stu7n105k5 stw7n105k5.pdf

STP7N105K5, STU7N105K5, STW7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - preliminary dataFeatures TABOrder codes VDS RDS(on) max. ID PTOTSTP7N105K5321STU7N105K5 1050 V 2 4 A 110 W 32TO-2201 STW7N105K5TO-247TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F

9.1. Size:596K st
std7nm60n stf7nm60n stu7nm60n.pdf

STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9 5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications

9.2. Size:876K st
stp7n65m2 stu7n65m2.pdf

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

9.3. Size:882K st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf

STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V

9.4. Size:403K st
stu7nb90-i.pdf

STU7NB90STU7NB90IN-CHANNEL 900V - 1.1 - 7.3 A Max220/Max220IPowerMesh MOSFETTYPE VDSS RDS(on) IDSTU7NB90 900 V

9.5. Size:45K st
stu7na80.pdf

STU7NA80N - CHANNEL 800V - 1.3 - 6.5A - Max220FAST POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTU7NA80 800 V

9.6. Size:995K st
std7n80k5 stp7n80k5 stu7n80k5.pdf

STD7N80K5, STP7N80K5, STU7N80K5N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on)max ID PTOT2 31STD7N80K5DPAKSTP7N80K5 800 V 1.2 6 A 110 WTABSTU7N80K5TAB Worldwide best FOM (figure of merit)3 Ultra low gate charge2312

9.7. Size:736K st
stu7nf25.pdf

STU7NF25N-channel 250 V, 0.29 typ., 8 A STripFET II Power MOSFET in IPAK packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max. IDTABSTU7NF25 250 V 0.42 8 A 100% avalanche tested3 175 C junction temperature21ApplicationsIPAK Switching applicationsDescriptionThis Power MOSFET has been developed using Figure 1. Internal sche

9.8. Size:1199K st
std7n60m2 stp7n60m2 stu7n60m2.pdf

STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21

9.9. Size:45K st
stu7nb100.pdf