STU7N65M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STU7N65M2
   Código: 7N65M2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 14.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.15 Ohm
   Paquete / Cubierta: IPAK

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STU7N65M2 Datasheet (PDF)

..1. Size:876K st
stp7n65m2 stu7n65m2.pdf

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

8.1. Size:1199K st
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9.1. Size:596K st
std7nm60n stf7nm60n stu7nm60n.pdf

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9.2. Size:882K st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf

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9.3. Size:403K st
stu7nb90-i.pdf

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9.4. Size:45K st
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STU7NA80N - CHANNEL 800V - 1.3 - 6.5A - Max220FAST POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTU7NA80 800 V

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STD7N80K5, STP7N80K5, STU7N80K5N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on)max ID PTOT2 31STD7N80K5DPAKSTP7N80K5 800 V 1.2 6 A 110 WTABSTU7N80K5TAB Worldwide best FOM (figure of merit)3 Ultra low gate charge2312

9.6. Size:736K st
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9.7. Size:45K st
stu7nb100.pdf

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9.8. Size:1031K st
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